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Operation and Modeling of the MOS Transistor (4th

Operation and Modeling of the MOS Transistor (4th

Operation and Modeling of the MOS Transistor (4th ed.) by Yannis Tsividis, Colin McAndrew

Operation and Modeling of the MOS Transistor (4th ed.)



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Operation and Modeling of the MOS Transistor (4th ed.) Yannis Tsividis, Colin McAndrew ebook
Format: pdf
Page: 752
Publisher: Oxford University Press, USA
ISBN: 0195170156, 9780195170153


Tsividis, "Operation and Modeling of the MOS Transistor", 2 ed., McGraw Hill, 1999 B. The use of metal-oxide-semiconductor (MOS) devices in integrated circuit . Includes inductive degeneration for nMOS amplifiers, and differential FET and Gilbert cell mix- .. [Yannis Chicago (Author-Date, 15th ed.) Edition/Format: Book : English : 3rd edView all editions and formats. Simulation, Fourth Edition Operation and Modeling of the MOS Transistor - 2003 . Arises since Maxwell's equations involve vector differential or integral operations on vec -. Metal Oxide Semiconductor Field Effect Transistor 546 . Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Yannis Tsividis and Colin McAndrew, Operation and Modeling of the. MOS Transistor, 3d edition, Oxford University Press, 2011, ISBN 978-. Streetman, "Solid State Electronic Devices", 4th ed., Prentice Hall, 1995. Operation and modeling of the MOS transistor.

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